#GT30F123 TOSHIBA GT30F123 New • Insulated Gate Bipolar Transistor , GT30F123 pictures, GT30F123 price, #GT30F123 supplier
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30F123/ GT30F123 IGBT. 
• Breakdown Voltage VCES (V) @Ta = 25˚C : 300V
• IGBT Current Rating IC (A) @Ta = 25˚C : 200A
• Insulated Gate Bipolar Transistor
• Case Style: TO220SIS/ Short Leads 
• Insulated Gate Bipolar Transistor

Shunlongwei Inspected Every GT30F123 Before Ship, All GT30F123 with 6 months warranty.

Part Number Manufacturer Packaging Descript Qty
BF995FD-GS08 VISHAY SOT-143 45091 PCS
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M51320FP MITSUBIS SOP-16 2090 PCS
X5083ZI INTERSIL SOP8 5680 PCS
CH7013B-D CHRONTEL QFP48 Consumer IC, 885 PCS
L08056R8DEWTR-6R8 AVX 805 1820 PCS
ADM6316AY27ARJZ-R7 AD TSOT23-5 Supervisory Circuit with Watchdog, Manual Reset, and Active-Low/Push-Pull 1540 PCS
LM150X05-F3 LG Display 250Mcd, B/R 300 1 15 inch, Resolution 1024 250 PCS